采用紫外皮秒激光在As₂Se₃玻璃表面以线扫描形式快速制备大面积周期性点阵式增透微结构，获得了红外透光性能提高的硫系玻璃样品。研究确定了As₂Se₃玻璃的激光刻蚀阈值，并研究设计了合适线扫描工艺方法。所制样品相对于原样在波长11.0 μm~12.4 μm范围内，透过率平均提高10.0 %；波长13.0 μm~14.2 μm范围内，透过率平均提高5.2 %。激光扫描制备方法没有破坏样品表面原有的浸润性，整个制备过程均在空气开放环境下进行，成本低，工艺可控性强，效率高，制备8 mm×8 mm的表面微结构，仅用时3.65 s，且表面微结构单元尺寸及间距可按材料应用需求调控。分析表明，当激光能量较低时，对该硫系玻璃的去除以“冷加工”为主，不会有明显的热效应，得到微结构的硫系玻璃表面元素组成未发生改变；激光能量较高时，会存在一定的热效应，使得刻蚀点出现熔融态，在微坑边缘出现凸起或翻边。

Large-scale periodic dot matrix anti-reflective microstructures were fabricated on the surface by using UV picosecond laser with rapid line scanning to improve the infrared transmittance of As₂Se₃glass. In the study, the laser ablation threshold of As₂Se₃glass was concluded and the optimal line scanning method was designed. The transmittance of the fabricated chalcogenide glass increased about 10.0 % and 5.2% in wavelength ranged from 11.0 μm~12.4 μm and 13.0 μm~14.2 μm, respectively. In addition, the wettability of the glass was not dam-aged by laser scanning. The processing was carried out in air condition showing low cost, high controllability and high efficiency. It only took 3.65 s to finish the fabrication of 8 mm×8 mm surface structures. Both the size and space of the surface microstructure unit can be controlled according to the application requirement. The removal of the chalcogenide glass induced by laser was mainly based on "cold fabrication" in which no obvious thermal effects inducing the element change on the surface were observed. Higher laser energy could induce obvious thermal effect resulting in melting of the ablation points and bump of the crater edges.