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碳化硅封装高功率半导体激光器散热性能研究

Thermal Performance of High-Power Laser Diodes Packaged by SiC Ceramic Submount

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摘要

为研究基于碳化硅(SiC)陶瓷封装的高功率半导体激光器的散热性能, 将其与常用的氮化铝(AlN)陶瓷进行对比, 使用基于结构函数法的热阻仪分别测量SiC和AlN封装F-mount器件的热阻值, 得到SiC器件的总热阻约为3.0 ℃·W-1, AlN的约为3.4 ℃·W-1, SiC器件的实测热阻值比AlN器件低14.7%, 实验结果表明SiC过渡热沉具有较好的散热性能。实验进一步测试了两种过渡热沉封装器件的输出性能, 在16 A连续电流注入时, 915 nm波段的SiC器件单管输出功率为15.9 W, AlN为15 W, 测试结果显示SiC封装的器件具有更高的功率输出水平。

Abstract

The heat dissipating performance of high-power laser diodes packaged by silicon carbide (SiC) ceramic submounts is investigated, comparing with the commonly-used aluminum nitride (AlN) ceramic submounts. The thermal resistance of SiC and AlN submounts packaged F-mount devices are measured by the thermal resistance instrument based on the structure function method. The thermal resistance of SiC devices is about 3.0 ℃·W-1, and the AlN ones is about 3.4 ℃·W-1. The measured thermal resistance of SiC devices is about 14.7% less than that of the AlN. The experimental data shows better heat-dissipating performance of SiC submounts. In addition, the output characteristics of devices packaged by two kinds of submounts are further tested. The output power of 915 nm single emitter of SiC device achieves 15.9 W at the continuous injection of 16 A, while for AlN device, the value is only 15 W. Test results demonstrate that the SiC packaged laser diode achieves higher power output.

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中图分类号:TN248.4

DOI:10.3788/cjl201845.0101002

所属栏目:激光器件与激光物理

收稿日期:2017-06-21

修改稿日期:2017-07-13

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倪羽茜:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083中国科学院大学, 北京 100049
井红旗:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083
孔金霞:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083
王翠鸾:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083
刘素平:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083
马骁宇:中国科学院半导体研究所光电子器件国家工程中心, 北京 100083

联系人作者:倪羽茜(niyuxi@semi.ac.cn)

备注:倪羽茜(1991-), 女, 博士研究生, 主要从事大功率半导体激光器封装方面的研究。

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引用该论文

Ni Yuxi,Jing Hongqi,Kong Jinxia,Wang Cuiluan,Liu Suping,Ma Xiaoyu. Thermal Performance of High-Power Laser Diodes Packaged by SiC Ceramic Submount[J]. Chinese Journal of Lasers, 2018, 45(1): 0101002

倪羽茜,井红旗,孔金霞,王翠鸾,刘素平,马骁宇. 碳化硅封装高功率半导体激光器散热性能研究[J]. 中国激光, 2018, 45(1): 0101002

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