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氮δ掺杂Cu2O薄膜的生长及物性研究

Research on Growth and Physical Properties of N δ-doped Cu2O Films

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摘要

采用等离子体增强原子层沉积(PEALD)技术, 以NH3为掺杂源, 制备了氮δ掺杂Cu2O 薄膜, 研究了N掺杂对Cu2O薄膜表面形貌、光学及电学性质的影响。研究结果表明, N掺杂引起了晶格畸变, Cu2O薄膜的表面粗糙度增大; 掺杂后Cu2O薄膜的带隙宽度从2.70 eV增加到3.20 eV, 吸收边变得陡峭; 掺杂后载流子浓度为6.32×1019 cm-3, 相比于未掺杂样品(5.77×1018 cm-3)的提升了一个数量级。

Abstract

By the plasma enhanced atomic layer deposition (PEALD) technique, the N δ-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N δ-doped Cu2O thin films increases. The bandgap width of the N δ-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32×1019 cm-3, enhanced by one order of magnitude comparing with that of the un-doped samples (5.77×1018 cm-3).

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中图分类号:O484

DOI:10.3788/cjl201845.0103003

所属栏目:材料与薄膜

基金项目:国家自然科学基金(61404009)、吉林省科技发展计划(20170520118JH)、长春理工大学科技创新基金(XJJLG-2016-14)

收稿日期:2017-08-07

修改稿日期:2017-09-13

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作者单位    点击查看

李微:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
潘景薪:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
王登魁:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
方铉:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
房丹:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
王新伟:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
唐吉龙:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
王晓华:长春理工大学高功率半导体激光国家重点实验室, 吉林 长春 130022
孙秀平:长春理工大学理学院, 吉林 长春 130012

联系人作者:李微(871522263@qq.com)

备注:李微(1992-), 女, 硕士研究生, 主要从事纳米材料与低维物理方面的研究。

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引用该论文

Li Wei,Pan Jingxin,Wang Dengkui,Fang Xuan,Fang Dan,Wang Xinwei,Tang Jilong,Wang Xiaohua,Sun Xiuping. Research on Growth and Physical Properties of N δ-doped Cu2O Films[J]. Chinese Journal of Lasers, 2018, 45(1): 0103003

李微,潘景薪,王登魁,方铉,房丹,王新伟,唐吉龙,王晓华,孙秀平. 氮δ掺杂Cu2O薄膜的生长及物性研究[J]. 中国激光, 2018, 45(1): 0103003

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