强激光与粒子束, 2018, 30 (1): 015001, 网络出版: 2018-01-30   

脉冲功率应用的IGBT快速驱动电路

High speed IGBT gate driving circuit applied to pulsed power system
作者单位
西南交通大学 物理科学与技术学院, 成都 610031
摘要
根据绝缘栅双极型晶体管(IGBT)的工作特性,研究设计了一种应用于脉冲功率系统的开关驱动电路,实现了IGBT的快速开通。阐述了驱动电路的原理,设计了基于平面变压器的驱动电路,在驱动芯片基础上为栅极提供幅值为60 V脉冲电压,提高开关速度。最后使用Blumlein双线结构对驱动电路的性能进行了实验验证。应用这种驱动方式,提高了集电极电流上升速率。实验结果表明,在1000 V的工作电压下,通过IGBT的脉冲电流达到了470.53 A,脉冲前沿为40 ns,di/dt达到9.41 A/ns,相比数据手册提供的数据,该电流上升速度提高了7.53倍,实现了对IGBT的快速驱动。
Abstract
Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT), a new type of switch driving circuit for pulsed power system has been designed. The switch turns on quickly with this driving circuit. The principle of this driving circuit is elaborated, and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V, so that switching speed can be improved. The driving circuit and pulse forming network are simulated by software. Meanwhile, experiment confirms this strategy using pulse forming network in Blumlein construction. By this strategy of driving, both pulse current through IGBT and the current slope are improved. Extended results of the performance of driving circuit are presented, which show that, the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV. The target of high-speed gate driving is achieved, and the current slope is 7.53 times the data given by the datasheet.

朱晓光, 张政权, 刘庆想, 刘猛, 王庆峰. 脉冲功率应用的IGBT快速驱动电路[J]. 强激光与粒子束, 2018, 30(1): 015001. Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, Liu Meng, Wang Qingfeng. High speed IGBT gate driving circuit applied to pulsed power system[J]. High Power Laser and Particle Beams, 2018, 30(1): 015001.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!