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基于SiO2薄膜的915 nm半导体激光器的无杂质空位诱导量子阱混合研究

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

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摘要

为了提高915 nm半导体激光器腔面抗光学灾变的能力, 采用基于SiO2薄膜无杂质诱导量子阱混合法制备符合915 nm半导体激光器AlGaInAs单量子阱的非吸收窗口.研究了无杂质空位诱导量子阱混合理论及不同退火温度、不同退火时间、SiO2薄膜厚度、SiO2薄膜折射率、不同盖片等试验参数对制备非吸窗口的影响, 并且讨论了SiO2薄膜介质膜的多孔性对无杂质诱导量子阱混合的影响.实验制备出蓝移波长为53 nm的非吸收窗口, 最佳制备非吸收窗口条件为退火温度为875℃, 退火时间为90s, SiO2薄膜折射率为1.447, 厚度为200 nm, 使用GaAs盖片.

Abstract

The non-absorbing window is adopted in the 915nm semiconductor laser to improve the catastrophic optical damage level of the device. The non-absorbing window is fabricated by impurity free vacancy diffusion induces quantum well intermixing based on SiO2 thin film technology. The theory of the impurity free vacancy diffusion induces quantum well intermixing will be systematic researching. And the different experimental conditions such as the annealing temperature, the thickness of SiO2 thin film, the refractive index of SiO2 film and the cover gaps are evaluated in the paper. And the mechanism is discussed for the effect of the porosity SiO2 film dielectric film in the impurity free vacancy diffusion induces quantum well intermixing. Ultimately the experiment results show that a luminescence blue shift 53 nm is obtained from the sample The optimal experimental conditions are annealing at 875℃ for 90s, and the thickness of the SiO2 thin film is 200 nm with the refractive index is 1.447, choosing GaAs cap piece to be the cover gap.

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中图分类号:O436

DOI:10.3788/gzxb20184703.0314003

基金项目:国家自然科学基金(No.61306057)资助

收稿日期:2017-08-23

修改稿日期:2017-12-13

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王鑫:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083中国科学院大学, 北京 100049
赵懿昊:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083
朱凌妮:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083
侯继达:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083中国科学院大学, 北京 100049
马骁宇:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083
刘素平:中国科学院半导体研究所 光电子器件国家工程研究中心, 北京 100083

联系人作者:王鑫(wangxinhehe123@semi.ac.cn)

备注:王鑫(1988-),男, 博士研究生, 主要研究方向为高损伤阈值半导体激光器件.

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引用该论文

WANG Xin,ZHAO Yi-hao,ZHU Ling-ni,HOU Ji-da,MA Xiao-yu,LIU Su-ping. Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film[J]. ACTA PHOTONICA SINICA, 2018, 47(3): 0314003

王鑫,赵懿昊,朱凌妮,侯继达,马骁宇,刘素平. 基于SiO2薄膜的915 nm半导体激光器的无杂质空位诱导量子阱混合研究[J]. 光子学报, 2018, 47(3): 0314003

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