红外与毫米波学报, 2018, 37 (1): 30, 网络出版: 2018-03-14
高性能单光子雪崩二极管在180 nm CMOS工艺中的设计与实现
Design and implementation of high performance single-photon avalanche diode in 180 nm CMOS technology
单光子雪崩二极管 光子探测概率 模型 盖革模式 CMOS图像传感器技术 single-photon avalance diode (SPAD) photon detection probability (PDP) model Geiger mode CMOS CIS technology
摘要
为了实现大阵列电路集成，文中设计和实现了一种能与主动淬火电路集成的宽光谱范围和快速的单光子雪崩二极管(SPAD)芯片.一个精确的单光子雪崩二极管电路模型模拟了其在盖革模式下的静态和动态行为.该有源区直径为8 μm的单光子雪崩二极管器件是基于上海宏利GSMC 180 nm CMOS图像传感器(CIS)技术实现的.由于采用有效的器件结构，其击穿电压是15.2 V，淬灭时间是7.9 ns.此外，该器件实现了宽的光谱灵敏度，其在低过电压下的光子探测概率(PDP)从470 nm到680 nm光波长段最高可达15.7%.并且它在室温下的暗计数率相当低.
Abstract
A wide spectral range and fast Single-photon avalanche diode (SPAD) chip which can be integrated with actively quenching circuit for large array realization is designed and implemented. The precise circuit model of SPAD for simulating the static and dynamic behaviors in Geiger-mode is used. The device with an 8 μm diameter active area is fabricated in GSMC 180 nm CMOS image sensor (CIS) technology. With the efficient device’s structure, the low breakdown voltage is 15.2 V and quenching time is 7.9 ns. Additionally, the device achieves wide spectral sensitivity and enables maximum photon detection probability (PDP) of 15.7% from 470 to 680 nm of wavelength at low excess voltage. Moreover, it exhibits a relatively low dark count rate (DCR) at room temperature.
金湘亮, 曹灿, 杨红姣. 高性能单光子雪崩二极管在180 nm CMOS工艺中的设计与实现[J]. 红外与毫米波学报, 2018, 37(1): 30. JIN Xiang-Liang, CAO Can, YANG Hong-Jiao. Design and implementation of high performance single-photon avalanche diode in 180 nm CMOS technology[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 30.
PDF全文
