报道了使用分子束外延（Molecular beam epitaxy，MBE）技术，在（211）B碲镉汞（CdZnTe，CZT）衬底上生长中长波双色碲镉汞（HgCdTe，MCT）薄膜材料，生长温度为180℃，研究了双色碲镉汞薄膜材料衬底脱氧技术、分子束外延薄膜生长温度与缓冲层生长等关键技术，实现了中长波双色碲镉汞薄膜生长，外延薄膜采用相差显微镜、扫描电子显微镜（SEM）、傅里叶变换红外光谱仪（FTIR）、二次离子质谱仪（SIMS）及X射线衍射仪（XRD）对薄膜的表面缺陷、厚度、组分及其均匀性、薄膜纵向组分以及晶体质量进行了表征，表面缺陷数量低于600 cm^－2，组分（300 K测试）和厚度均匀性分别为Δx≤0.001、Δd≤0.9μm，X-Ray双晶衍射摇摆曲线FWHM＝65 arcsec，得到了质量较高的中长波双色碲镉汞薄膜材料。

Results are reported on the molecular-beam epitaxial (MBE) growth of a dual-band HgCdTe (MCT) structure. The structures were designed for a mid/long(M/L)-wavelength infrared detector, grown at 180℃ on (211)B-oriented CdZnTe substrates. Growth details including substrate deoxidation, growth temperature, and buffer layer are also reported. The surface quality, defect quantity, compositional uniformity, thickness uniformity, composition profile and crystal quality were analyzed and tested using phase contrast microscopy, scanning electron microscopy, Fourier-transform infrared transmission, secondary-ion mass spectroscopy and X-ray diffraction rocking curve. The surface defect was less than 600 cm^－2, the compositional uniformity was ≤0.001 and thickness uniformity was ≤0.9μm, the XRD FWHM shows a 65 arcsec result, all indicating good surface and crystal quality for our dual-band MBE MCT.