Photonics Research, 2018, 6 (4): 04000277, Published Online: Aug. 1, 2018  

Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide

Author Affiliations
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331, USA
Abstract
Transparent conductive oxides have emerged as a new type of plasmonic material and demonstrated unique electro-optic (E-O) modulation capabilities for next-generation photonic devices. In this paper, we report an ultra-compact, broadband electro-absorption (EA) modulator using an epsilon-near-zero (ENZ) indium-tin oxide (ITO). The device is fabricated on a standard silicon-on-insulator platform through the integration with a 3 μm long, 300 nm wide gold plasmonic slot waveguide. The active E-O modulation region consists of a metal–HfO2–ITO capacitor that can electrically switch the ITO into ENZ with ultra-high modulation strengths of 2.62 and 1.5 dB/μm in simulation and experiment, respectively. The EA modulator also demonstrated a uniform E-O modulation with 70 nm optical bandwidth from 1530 to 1600 nm wavelength.

Qian Gao, Erwen Li, Alan X. Wang. Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide[J]. Photonics Research, 2018, 6(4): 04000277.

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