发光学报, 2018, 39 (3): 343, 网络出版: 2018-04-09   

半导体激光器巴条封装应力及评价

Evaluation of Packaging Induced Stress of Semiconductor Laser Bar
作者单位
长春理工大学, 高功率半导体激光国家重点实验室, 吉林 长春 130022
摘要
为了快捷而有效地检测半导体激光器的封装应力,设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数,并利用有限元软件模拟,通过半导体能带与应力理论,说明偏振度与封装应力的影响关系。实验表明,巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算,封装应力为141.92 MPa,偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度,可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。
Abstract
In order to detect the packaging induced stress of semiconductor lasers quickly and effectively, an experimental device which can reveal the encapsulation stress by detecting the polarization degree of each unit of laser bar was designed. The parameters of the semiconductor laser bar were experimentally tested and the finite element software was used to simulate the relationship between the degree of polarization and the packaging induced stress through the theory of the semiconductor energy band and stress. The experiment results show that the individual light-emitting unit of the bar is less polarized, the higher threshold current is due to the larger packaging stress. Through the calculation, the packing stress is 141.92 MPa, and the polarization equivalent stress is 26.73 MPa. The degree of polarization of the device below the threshold reflects the distribution trend of the packaging induced stress, and the degree of polarization of the device can be measured by using the following threshold current. It can provide a quicker and more efficient method for selecting the heat sink and the solder material and the improvement of the welding process parameters.

张哲铭, 薄报学, 张晓磊, 顾华欣, 刘力宁, 徐雨萌, 乔忠良, 高欣. 半导体激光器巴条封装应力及评价[J]. 发光学报, 2018, 39(3): 343. ZHANG Zhe-ming, BO Bao-xue, ZHANG Xiao-lei, GU Hua-xin, LIU Li-ning, XU Yu-meng, QIAO Zhong-liang, GAO Xin. Evaluation of Packaging Induced Stress of Semiconductor Laser Bar[J]. Chinese Journal of Luminescence, 2018, 39(3): 343.

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