摘要

采用直流磁控溅射的方式，在浮法玻璃衬底上制备了氧化铟锡(ITO)薄膜。通过改变薄膜沉积时间，制备出不同厚度的ITO薄膜。随着膜厚由16 nm逐渐增大到271 nm，其结晶程度得到增强，对应的载流子浓度由4.79×1020 cm-3增大到2.41×1021 cm-3，表面等离子体共振(SPR)波长由1802 nm逐渐蓝移到1204 nm，实现了近红外区域SPR波长较宽范围的可控调节。采用Drude自由电子气模型，对不同厚度ITO薄膜的SPR波长进行了理论计算，进一步证明了SPR波长的有效调节取决于膜厚对载流子浓度的影响作用。

Abstract

The tin-doped indium oxide (ITO) thin films are fabricated on the float glass substrates by the direct current (DC) magnetron sputtering method. The ITO thin films with different thicknesses are fabricated by changing the deposition time. As the film thickness gradually increases from 16 nm to 271 nm, the crystallinity is enhanced and the corresponding carrier concentration is increased from 4.79×1020 cm-3 to 2.41 ×1021 cm-3. Thus the corresponding surface plasmon resonance (SPR) wavelength blueshifts from 1802 nm to 1204 nm. The controllable modulation of near infrared SPR wavelength within a relatively broad range is realized. The SPR wavelength of the ITO films with different film thicknesses are theoretically calculated by using the Drude free electron gas model, which further confirms that the effective modulation of SPR wavelength is determined by the influence of film thickness on carrier concentration.

补充资料

中图分类号：O531

DOI：10.3788/LOP55.051602

所属栏目：材料

基金项目：国家自然科学基金(61404009)、吉林省科技发展计划(20170520118JH)、长春理工大学校创 新基金(XJJLG-2016-11)

收稿日期：2018-01-12

修改稿日期：2018-01-17

网络出版日期：--

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联系人作者：王新伟(wxw4122@cust.edu.cn)

备注：蔡昕旸(1994-)，女，硕士研究生，主要从事纳米材料与低维物理方面的研究。E-mail: 978784701@qq.com

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Cai Xinyang,Wang Xinwei,Li Ruxue,Wang Dengkui,Fang Xuan,Fang Dan,Zhang Yuping,Sun Xiuping,Wang Xiaohua,Wei Zhipeng. Controllable Modulation of Surface Plasmon Resonance Wavelength of ITO Thin Films[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051602

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