中国激光, 2018, 45 (5): 0501006, 网络出版: 2018-05-02
窄线宽1064 nm分布布拉格反射半导体激光器 下载: 1232次
Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser
激光器 1064 nm半导体激光器 分布布拉格反射激光器 单模激光器 脊型波导 窄线宽 lasers 1064 nm semiconductor lasers distributed Bragg reflector lasers single mode lasers ridge waveguide narrow linewidth
摘要
1064 nm分布布拉格反射(DBR)半导体激光器具有窄线宽、输出稳定的特性, 在自由空间激光通信用种子光源等方面具有广阔的应用前景。设计了一种单模、窄线宽的1064 nm DBR半导体激光器, 利用金属有机化合物气相沉积技术生长出InGaAs应变量子阱半导体激光器材料, 并制备出腔长为1200 μm的脊型波导1064 nm DBR半导体激光器。当注入电流为70 mA时, 室温下该激光器的连续输出功率可达到7 mW, 3 dB光谱线宽为0.12 nm。
Abstract
The 1064 nm distributed Bragg reflector (DBR) semiconductor laser has the characteristics of narrow linewidth and stable output, and it has a broad application prospect in the field of free space laser communication used as seed light source. A single mode and narrow linewidth 1064 nm DBR semiconductor laser is designed. Metalorganic chemical vapor deposition (MOCVD) technique is used to grow InGaAs strained quantum well laser material, and a ridge waveguide 1064 nm DBR semiconductor laser with the cavity length of 1200 μm is fabricated. When injection current is 70 mA, the continuous output power of the laser can reach 7 mW, and 3 dB spectral linewidth of the laser is 0.12 nm at room temperature.
贾宝山, 王皓, 李爱民, 王梦鹤, 都继瑶, 李辉, 李再金, 薄报学, 曲轶. 窄线宽1064 nm分布布拉格反射半导体激光器[J]. 中国激光, 2018, 45(5): 0501006. Jia Baoshan, Wang Hao, Li Aimin, Wang Menghe, Du Jiyao, Li Hui, Li Zaijin, Bo Baoxue, Qu Yi. Narrow Linewidth 1064 nm Distributed Bragg Reflector Semiconductor Laser[J]. Chinese Journal of Lasers, 2018, 45(5): 0501006.