InGaAs/InP盖革模式雪崩光电二极管(APD)阵列的性能与阵列片内均匀性密切相关。阵列面元的主要结构参数有倍增区厚度、电荷层厚度和掺杂浓度、吸收区的厚度以及器件工作的过偏压。它们的不一致性不仅会造成器件本身性能的差异, 还为后续的读出电路带来了巨大的挑战。通过研究APD结构参数变化对其击穿电压(Vbreak)、暗计数率(DCR)和单光子探测效率(PDE)的影响, 将APD阵列面元间击穿电压波动控制在±1V以内, 使暗计数率和光探测效率的波动小于10%, 从而得到不同温度下各个结构参数的最大允许波动值,确定了每个温度下制约器件性能的主要因素,为大规模、高性能盖革模式雪崩光电二极管阵列的材料生长和工艺制备提供了理论依据。

The performance of InGaAs/InP avalanche photodiode array is closely associated with the chip uniformity. The structure parameters mainly include the thickness of multiplication layer, the thickness and doping concentration of the charge layer, the thickness of the absorbtion layer and also the overbias of the devices. Their nonuniformity not only affects its properties such as breakdown voltage, dark count rate (DCR), photo detection efficiency (PDE), but also brings great challenges for subsequent readout circuits. In this paper, the influence of the structural parameters on Vbreak, DCR and PDE was analyzed. By controlling the volatility of Vbreak within ±1V as well as DCR and PDE within 10%, the maximum allowable fluctuation value of each structural parameter under different temperatures was obtained. The main factors related to the performance of devices were summarized, providing theoretical reference for the material growth and fabrication of large scale and high performance Geiger mode avalanche photodiode arrays.