针对大功率隧道结半导体激光器因光学灾变损伤(COD)而导致输出光功率无法进 一步提高的问题,通过优化器件材料结构,提高了其COD阈 值.采用标准的半导体 激光器制作工艺,制作了发光区条宽为２００μm、腔长为９００μm的单隧道结半导体激光器. 在脉冲宽度为 ２００ns、重复频率为５kHz的室温下进行 测 试,器 件 峰 值 功 率 超 过 ７０ W,并 且 无 明 显 COD 现 象 发 生. 在 ２０A 工作电流下,器件峰值波长为９０７nm,光谱宽度为７nm,斜率效率为１．８８,接近相同工作电流下单有源层激光器的两倍.

The output power of highＧpower tunnel junction laser is limited by the catastrophic optical damage(COD)．To solve this problem,the COD threshold value of the high-power tunnel cascade was improved by optimizing the material structure of the devices．Inthis paper,a single tunnel junction laser chip with the strip width of 200μm and the cavity length of 900μm was fabricated．Experimental results show that under the conditions of pulse frequency of 5 kHz and pulse width of 200 ns,the peak power of the fabricated laser exceeds70 W at room temperaturewithnoobviousCOD．Attheoperatingcurrentof２０A,thedesignedlasershows the peak wavelength of 907nm,spectral width of 7nm and slope efficiency of 1.88,which is about two times that of the single active layer lasers at the same operating current．