Photonics Research, 2018, 6 (7): 07000734, Published Online: Jul. 4, 2018   

Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700  nm

Author Affiliations
1 Electrical and Computer Engineering, University of California—Davis, Davis, California 95618, USA
2 W&WSens Devices, Inc., 4546 El Camino, Suite 215, Los Altos, California 94022, USA
3 Electrical Engineering, Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA
4 e-mail: sislam@ucdavis.edu
Abstract
In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency (EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% at 1550 nm with an intrinsic Ge layer of only 2 μm thickness, showing much improvement compared to one without microholes. More than threefold EQE improvement is also observed at longer wavelengths beyond 1550 nm. These results make the microhole-enabled Ge-on-Si photodiodes promising to cover both the existing C and L bands, as well as a new data transmission window (1620–1700 nm), which can be used to enhance the capacity of conventional standard single-mode fiber cables. These photodiodes have potential for many applications, such as inter-/intra-datacenters, passive optical networks, metro and long-haul dense wavelength division multiplexing systems, eye-safe lidar systems, and quantum communications. The CMOS and BiCMOS monolithic integration compatibility of this work is also attractive for Ge CMOS, near-infrared sensing, and communication integration.

Hilal Cansizoglu, Cesar Bartolo-Perez, Yang Gao, Ekaterina Ponizovskaya Devine, Soroush Ghandiparsi, Kazim G. Polat, Hasina H. Mamtaz, Toshishige Yamada, Aly F. Elrefaie, Shih-Yuan Wang, M. Saif Islam. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700  nm[J]. Photonics Research, 2018, 6(7): 07000734.

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