根据MOCVD （metal organic chemical vapor deposition）在线红外测温的发展需要，结合Thomas Swan CCS MOCVD反应室的结构特征，考虑加热比调节空烧过程的特定条件，设计了一种能够在线监测MOCVD石墨盘上表面温度及径向19个点温度分布的简易940 nm红外测温装置。通过安装于光学视窗上方的红外探头，探测高温石墨盘及外延片的红外辐射强度，根据Planck黑体辐射公式及光谱发射率修正进行测温。红外测温装置主要由可读数轨道、红外探头、连接板以及精密平移台4部分组成。将该装置应用于MOCVD Si(111)衬底上制备InGaN/GaN 多量子阱(MQW)结构外延片加热程序的空烧过程，结果表明：最低能够测量的温度为430℃，700℃~850℃测量误差在2.3℃内，900℃~1 100℃测量误差在1℃内，700℃~1 100℃范围内，重复性均在0.6℃内，无需反射率修正、探孔有效面积校准；能稳定工作。

According to the development needs of online infrared thermometry of metal organic chemical vapor deposition (MOCVD), integrating the character of Thomas Swan CCS MOCVD reaction chamber, and considering the particular conditions of the process of heating ratio control vacuum calcination, a simple 940 nm infrared thermometry apparatus was designed, which can measure the surface temperature of MOCVD graphite plate and the radial temperature profile at 19 probe points online. The infrared radiation intensity of the high-temperature graphite disk and the epitaxial wafer was detected by an infrared probe installed above the optical window, and the temperature was measured according to the Planck blackbody radiation formula and the spectral emissivity correction. The infrared temperature measuring device is mainly composed of a readable track, an infrared probe, a connecting plate, and a precision translation stage. The apparatus was used in the process of silicon(111) substrate growing epitaxial wafer with InGaN/GaN MQW vacuum calcination by MOCVD. Result shows that the lowest range of thermometry is equally 430℃；the accuracy is within 2.3℃ from 700 ℃ to 850℃, the accuracy is within 1℃ from 900 ℃ to 1100℃, the repeatability is within 0.6℃ from 700 ℃ to 1100℃. The apparatus work stably, without the need for reflectivity correction and effective hole area calibration .