针对像素电极与公共电极换位(P-ITO and C-ITO Interchanged，PCI) 结构薄膜晶体管液晶显示器(Thin Film Transistor - Liquid Crystal Display，TFT-LCD)产品中出现的一种竖Mura，结合生产工艺的实际情况，本文运用关键尺寸(Critical Dimension，CD)、EPM(Electrical Properties Measurement)、SEM (Scanning Electron Microscope，扫描电子显微镜)等检测设备，进行了大量的实验测试、数据处理和理论分析工作。通过测量Cell Gap、膜厚、CD、Overlay等特性参数，进行产品设计对比、光效模拟和Lens恶化实验，发现该不良与PCI结构的特殊性有关。其产生的根本原因是不良区域内两层ITO之间左右非交叠区域CD差异造成电场分布异常导致液晶偏转角度异常，最终导致屏幕亮暗不均。通过改变ITO对位方式提高两层ITO之间左右非交叠区域的均一性，有效地降低了不良的发生率(从26%下降到01%以内)。

Aiming at a vertical Mura occurred in the TFT-LCD (Thin Film Transistor - Liquid Crystal Display) products with PCI (P-ITO and C-ITO Interchanged) structure, this paper did amount of work, combined with the actual situation of productive technology and through CD (Critical Dimension), EPM (Electrical Properties Measurement) and SEM (Scanning Electron Microscope) equipment, such as experiments testing, data processing and theoretical analysis. By measuring characteristic parameters (Cell Gap, Film thickness, Critical Dimension and Overlay), comparing the product design, lighting simulation and Lens deterioration, it has been found that the vertical Mura is closely related to the special properties of PCI structure. It also has been found that the occurrence of the NG is mainly due to the gap between the CD value of ITO’s left and right no-overlapping area in NG panel, which made the electric field distribute abnormally and the liquid crystal deflect unusually, finally gave rise to the uneven brightness. By changing the ITO contrapuntal method to improve the homogeneity of the ITO’s left and right no-overlapping area, we can effectively reduce the ratio of the Mura from 26% to less than 0.1%.