Photonics Research, 2018, 6 (8): 08000794, Published Online: Aug. 1, 2018
Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys
Abstract
Digital alloy In 0.52 Al 0.48 As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203 to 323 K, of the impact ionization characteristics of In 0.52 Al 0.48 As and Al 0.74 Ga 0.26 As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.
Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys[J]. Photonics Research, 2018, 6(8): 08000794.