本文基于ICP 方法对长波HgCdTe 材料表面进行了氢化处理，首次在同一焦平面器件上实现了氢化工艺效果的对比。利用原子力显微镜（AFM）、低温探针台系统和焦平面测试系统对HgCdTe 材料表面微观形貌及相关器件的电学特性进行了表征分析，结果表明：对长波HgCdTe 材料表面进行氢化处理能有效降低MIS 器件的界面态、改善二极管器件性能，同时能够增大焦平面器件的信号响应度、减小盲元率。该研究对改善长波HgCdTe/钝化层的界面态以及提高长波HgCdTe 器件性能提供了依据。

For the first time, a comparison, on the same focal plane device, of the hydrogenation effect of inductively coupled plasma surface (ICP) hydrogenated long-wavelength-HgCdTe has been carried out. The microstructure of the HgCdTe surface and the electrical characteristics of its related devices were determined by AFM, low-temperature-probe, and focal-plane-test systems. The results show that the ICP hydrogenation of the long-wavelength-HgCdTe surface can reduce the interface state of the metal-insulator-semiconductor (MIS) devices, improve the performance of the diodes, increase the signal-response degree, and reduce the blind pixel rate of focal plane devices. This study provides a basis for improving the interface state and passivation layer of long-wavelength HgCdTe, thus enhancing the device performance.