设计并制备了一款短波长红光640 nm的大功率半导体激光器。利用金属有机化学气相沉积技术生长了AlGaInP材料的激光器外延层，其中，限制层使用低折射率的AlInP材料，有源区使用张应变的GaInP/AlGaInP量子阱。外延层有源区的光致发光谱出现两个分裂的发光峰，位于627 nm及616 nm处，分别对应于电子到轻空穴及重空穴的跃迁。对芯片窗口区域进行选择性Zn扩散，量子阱原子发生混杂，波长蓝移了43 nm。不带非吸收窗口的器件在1.9 A发生腔面灾变性光学损伤（COD），功率为1.4 W。而带窗口结构的器件没有产生COD，功率输出受限于热饱和，最大功率为2.3 W。室温连续电流测试，1 A下波长为639 nm，1.5 A下波长为640 nm。器件水平发散角为6°，垂直发散角为41°。

A short wavelength red light 640 nm high power laser diode has been designed and fabricated. AlGaInP epitaxial layers of the laser diodes are grown by metal organic chemical vapor deposition. The cladding layers are AlInP with low refractive index. The active layer is tensile strained GaInP/AlGaInP quantum well. The photoluminescence spectrum of the active layer shows two splitting peaks locate at 627 nm and 616 nm, which correspond to the transitions from electrons to light holes and heavy holes, respectively. Zn atoms are selectively diffused into the window region, leading to the mixing of the quantum well. The wavelength is blue-shifted by 43 nm. The catastrophic optical damage (COD) occurs for the laser diode without window structure at 1.9 A, corresponding to the power of 1.4 W. The device with window structure has no COD phenomenon. The output power is limited by the thermal rollover with the maximum of 2.3 W. At room temperature, the wavelength of the laser diode is 639 nm at 1 A while 640 nm at 1.5 A. The horizontal divergence angle of the device is 6° and the vertical divergence angle is 41°.