双极晶体管经中子辐照后会引起直流增益退化，在109~1016 cm-2的注量范围内，其直流增益倒数变化与辐照中子注量呈线性关系。对直流增益退化的双极晶体管进行高温退火，能使受到辐射损伤的双极晶体管性能恢复。鉴于此，将双极晶体管进行逆向工程应用，制作成中子注量探测器，经标定后，可实现对中子注量的监测。对探测器的装配结构进行设计后，依托中国工程物理研究院快中子脉冲堆(CFBR-Ⅱ)，在1012~1013 cm-2的注量范围对3DK2222A型探测器和在1013 cm-2的注量范围对3DG121C型探测器进行标定。在得到探测器损伤常数K的分散性存在较小和较大的两种情况下，确定了分散性较小时的有效取值和应用方法，以及在分散性较大时，采取标定的损伤常数K只能应用在同只探测器上的方案，并通过高温退火实验证实了该方案的可行性。

The DC gain of bipolar transistor will degenerate after neutron irradiation. In the range of flux of 109-1016 cm-2, the reciprocal change of DC gain is linearly related to the neutron flux. The high temperature annealing of the bipolar transistor with DC gain degradation can restore the performance of the bipolar transistor which has been damaged by radiation. In view of this, the bipolar transistor was used in reverse engineering, and the neutron flux detector was fabricated. After calibration, the neutron flux could be monitored. After designing the assembly structure of the detector and relying on the CFBR-Ⅱ reactor, the 3DK2222A detector was calibrated in the flux range of 1012-1013cm-2. The 3DG121C detector is calibrated in the flux range of 1013 cm-2. The dispersion of the damage constant K of the detector is obtained as smaller or larger, the effective value and application method of the smaller dispersion are determined, and in cases of larger dispersion, the calibrated damage constant K can only be applied to the same detector, and the feasibility of the scheme is proved by high temperature annealing experiment.