采用低压化学气相沉积方法在玻璃衬底上制备了B掺杂的ZnO(BZO)薄膜, 通过氢退火对BZO进行处理, 然后作为前电极进行了非晶硅薄膜太阳能电池的制备及性能研究。结果表明: 在氢气气氛下退火后, BZO薄膜的载流子浓度基本无变化, 但Hall迁移率显著提高, 这使得BZO薄膜的导电能力提高; 当采用厚度较小、透光率较高的BZO薄膜进行氢退火后作为前电极结构时, 非晶硅薄膜太阳能电池的短路电流密度提高0.3~0.4 mA/cm2, 电池的转化效率提高0.2%。实验结果可为通过优化前电极结构来提高非晶硅薄膜太阳能电池转化效率提供一种简易的方法。

B doped ZnO(BZO) films were prepared on glass substrate by low pressure chemical vapor deposition(LPCVD) method. BZO films were annealed in hydrogen atmosphere and then were used as front contact structure for fabrication of amorphous silicon thin film solar cells. The results show that the carrier concentration of BZO films has no change after annealing in the hydrogen atmosphere, but the carrier mobility dramatically increases, which lead to great enhancement of electrical conductivity of BZO films. When a thinner BZO film with higher transmittance workes as the front contact structure, the light-generated current density increases by 0.3-0.4 mA/cm2 and the conversion efficiency of amorphous silicon thin film solar cells is improved by 0.2%. The results in this paper can provide a method for further improving the conversion efficiency of amorphous silicon thin film solar cells by optimizing optical and electrical properties of front contact of BZO thin films.