半导体光电, 2018, 39 (4): 486, 网络出版: 2018-08-29  

高速InGaAs光电探测器γ辐照实验研究

Research on γ Irradiation of High-Speed InGaAs Photodetector
作者单位
重庆光电技术研究所, 重庆 400060
摘要
高速InGaAs光电探测器在天基平台中的应用正逐渐广泛, 研究空间辐射环境对高速InGaAs光电探测器性能的影响有着重要意义。采用实时测试法, 研究了不同剂量及不同剂量率的γ辐照对高速InGaAs光电探测器响应度、3dB带宽及暗电流特性的影响, 通过器件性能实时测试分析发现, 器件的暗电流随辐照剂量或剂量率的增加而增大, 而响应度、3dB带宽基本不变。
Abstract
As increasing demands for high-speed InGaAs photodetector in space application, it is more significant to research the effect of space radiation on high-speed InGaAs photodetector. Using the real-time measurement, the variation in the responsivity, 3dB bandwidth, dark current of high-speed InGaAs photodetector irradiated with different γ radiation dose and rate was studied. By anaylzing the real-time measurement data, it shows that the dark current rise with the increasing of radiation dose or rate, but the responsivity and saturation optical power slightly change under different γ radiation dose and rate. The results indicate that γ radiation has less effect on high-speed InGaAs photodetector.

樊鹏, 付倩, 申志辉, 唐艳, 柳聪, 崔大建. 高速InGaAs光电探测器γ辐照实验研究[J]. 半导体光电, 2018, 39(4): 486. FAN Peng, FU Qian, SHEN Zhihui, TANG Yan, LIU Cong, CUI Dajian. Research on γ Irradiation of High-Speed InGaAs Photodetector[J]. Semiconductor Optoelectronics, 2018, 39(4): 486.

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