采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料, 研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪(HRXRD)和荧光显微镜(FL)对晶体质量进行了表征, 使用电致发光系统积分球测试对光电性能进行了表征。结果表明: 随着气压升高, In的并入量略有降低且均匀性更好, 量子阱中的点缺陷数目降低, 但是阱垒间界面质量有所下降。在实验选取的4个气压4, 6.65, 10, 13.3 kPa下, 外量子效率最大值随着量子阱生长气压的上升而显著升高, 分别为16.60%、23.07%、26.40%、27.66%, 但是13.3 kPa下生长的样品在大电流下EQE随电流droop效应有所加剧, 在20 A·cm-2的工作电流下, 样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%, 10 kPa下生长的量子阱的整体光电性能最好。

InGaN/GaN multiple quantum wells(MQWs) yellow light-emitting diodes(LEDs) were grown on patterned silicon substrate by metal org anic vapor deposition. The effect of diff erent quantum well growth pressure on the photoelectric properties of yellow light LED has been investigated.The crystal quality was characterized by high resolution X-ray diffraction(HRXRD) and fluorescence microscope(FL), and the photoelectric properties were characterized by using an integrated integrating sphere. the results review that increased pressure decreases In incorporation, but also enhances the uniformity, contributing to the lower point defects but roughness interface. The maximum of external quantum efficiency improves significantly under the pressure 4, 6.65, 10, 13.3 kPa, respectively 16.60%, 23.07%, 26.40%, 27.66%. However, it is noted that more efficiency droop appears with the growth pressure at 13.3 kPa. Under the working current of 20 A·cm-2 , the EQE of A, B, C and D were 16.60%, 19.77%, 20.03% and 19.45%, respectively. The best photoelectric performance of the device can be obtained when the growth pressure is set to 10 kPa.