Photonics Research, 2018, 6 (9): 09000925, Published Online: Sep. 5, 2018   

High-Q germanium optical nanocavity

Author Affiliations
1 Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan
2 Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo 113-0033, Japan
3 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China
4 Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
5 e-mail: goda@chem.s.u-tokyo.ac.jp
Abstract
Mid-infrared (MIR) integrated photonics has attracted broad interest due to its promising applications in biochemical sensing, environmental monitoring, disease diagnosis, and optical communication. Among MIR integration platforms, germanium-based platforms hold many excellent properties, such as wide transparency windows, high refractive indices, and high nonlinear coefficients; however, the development of MIR germanium photonic devices is still in its infancy. Specifically, MIR high-Q germanium resonators with comparable performance to their silicon counterparts remain unprecedented. Here we experimentally demonstrate an MIR germanium nanocavity with a Q factor of 18,000, the highest-to-date of reported nanocavities across MIR germanium-based integration platforms. This is achieved through a combination of a feasible theoretical design, Smart-Cut methods for wafer development, and optimized device fabrication processes. Our nanocavity, with its high Q factor and ultrasmall mode volume, opens new avenues for on-chip applications in the MIR spectral range.

Ting-Hui Xiao, Ziqiang Zhao, Wen Zhou, Mitsuru Takenaka, Hon Ki Tsang, Zhenzhou Cheng, Keisuke Goda. High-Q germanium optical nanocavity[J]. Photonics Research, 2018, 6(9): 09000925.

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