实验研究了一种由一个分布反馈半导体激光器、一个相位控制部分和一个半导体光放大器组成的三段式单片集成半导体激光器的动力学特性. 采用常规的动力学分析方法, 对不同相位控制电流下激光器输出的光谱、时间序列、相图及功率谱进行了分析, 考察了其进入混沌的路径及阵发混沌的特性。研究结果表明, 在适当的运行参数下, 单片集成半导体激光器可呈现混沌态与稳定态随机交替出现的阵发混沌状态输出.在固定分布反馈半导体激光器电流和半导体光放大器电流不变的情况下, 连续地增大相位区的电流IP, 单片集成半导体激光器将先后经历稳定态、单周期态、阵发混沌态, 最后再回到稳定态的过程.在确定了激光器处于阵发混沌态时相位区电流IP的取值范围之后, 进一步的分析结果表明, 随着相位区电流IP的增加, 平均层流时间先减小, 达到一个极小值后再迅速增大.

Dynamical characteristics of a monolithically integrated semiconductor laser have been experimentally studied. The laser consists of a distributed feedback semiconductor laser section, a phase controlling section and a semiconductor optical amplifier section. Using a general analysis method of dynamics, we have experimentally investigated the bifurcation route to chaos and the dynamical characteristics of intermittent chaos through the optical spectra, time series, phase portraits and power spectra of the laser. The results show that, under suitable operating parameters, the monolithically integrated semiconductor laser can be driven into intermittent chaos oscillation characterized by the chaotic state stochastically interrupted by the stable state. For fixing the currents of distributed feedback semiconductor laser section and semiconductor optical amplifier section and gradually increasing the current of the phase controlling section IP, the monolithically integrated semiconductor laser successively undergoes stable state, period one, intermittent chaos, and returns to stable state. The range of IP required for achieving intermittent chaos oscillation is determined. Moreover, the evolution of the average laminar time with the increase of IP has been analyzed, and the result shows that, with the increase of IP, the average laminar time decreases firstly, after reaches a minimum, and then rapidly rises.