高功率基横模垂直腔面发射激光器(VCSEL)在光通信、传感、原子频标和光电混合集成等领域有着重要的应用, 将光子晶体结构引入到VCSEL中, 通过设计结构尺寸和分布,可以有效控制VCSEL的横向模式。课题组将正方形排列的光子晶体结构引入到VCSEL中, 实现对VCSEL的横向模式和基横模出光功率控制, 获得高基横模出光功率器件。通过采用平面波展开法(PWE)和全矢量三维时域有限差分方法(FDTD)对正方晶格结构光子晶体的合理设计, 获得正方形排布光子晶体周期、占空比和刻蚀深度等重要参数。成功地制备出基横模出光功率大于3 mW, 边模抑制比大于40 dB的正方晶格光子晶体VCSEL。

The high single fundamental mode output power vertical cavity surface emitting laser (VCSEL) has been attracted many attention due to its important applications in the fields of optical communications, sensing, atomic frequency standard and opto-electronic hybrid integration. With suitable photonic crystal structure and distribution, the lateral modes of VCSEL can be effectively controlled by introducing the photonic crystal structure into the top distribution Bragg reflector (DBR). In this paper, square array photonic crystal structure was introduced into the VCSEL to control the transverse mode and single fundamental mode output power. The plane wave expansion and the full-vector three-dimensional finite difference time domain method (FDTD) method were used to analyze the photonic crystal structure and arrangement. The important parameters such as the period, the duty cycle and the etching depth of the square arrangement photonic crystal were obtained by using these methods. The high output power square lattice photonic crystal single fundamental mode VCSEL was reported. The single fundamental mode output power of the square lattice photonic crystal VCSEL is larger than 3 mW and the side mode suppression ratios (SMSRs) is more than 40 dB.