锑化物材料因为其天然的禁带宽度较小的优势, 是2~4 μm波段半导体光电材料和器件研究的理想体系。近年来, 国内外在锑化物大功率半导体激光器方面的研究取得了很大的进展, 实现了大功率单管、阵列激光器的室温工作。然而, 由于锑化物材料与常见的半导体单模激光器制备工艺的不兼容性, 只有少数几个研究单位和公司掌握了锑化物单模激光器的制备技术。文中介绍了锑化物单模激光器常用的侧向耦合分布反馈激光器的基本原理, 分析了其设计的关键技术, 回顾了锑化物单模激光器的设计方案和制备技术, 并针对国内外锑化物单模激光器主要研究内容进行了总结。

Antimonide materials are the ideal system for the semiconductor photoelectric materials and devices of 2-4 μm due to its narrow bandgap. In recent years, great progress has been made in the research of antimonide high-power semiconductor lasers at home and abroad, and the room temperature operation of high-power single-tube and array lasers has been achieved. However, due to the incompatibility of antimonide materials with common fabrication technique of semiconductor single-mode lasers, only a few research institutes and companies have mastered the preparation of antimonide single-mode lasers. In this paper, the basic principle of the laterally coupled distributed feedback laser was introduced and the key technologies of the laser were briefly analyzed. The design scheme and preparation technology of the antimony single mode laser were also reviewed and summarized.