对比研究了吡唑喹啉衍生物(PAQ5)的掺杂对聚N-乙烯基咔唑(PVK)聚合物薄膜载流子传输性能的影响.分析薄膜宏观的电流密度-电场关系发现: 电场F在106~107 V·cm-1范围时, 纯PVK薄膜中电流密度J∝F2.1, 而在掺杂了PAQ5(4.8 wt%)的PVK薄膜中J∝F2.9.掺杂薄膜导电能力的提高, 除了有空穴从阳极注入PVK形成的空间电荷限制电流之外, 也有PAQ5使电子从阴极注入和传输形成的传输电流.分析薄膜用飞行时间法测得的瞬态光电流谱可得: 在1×105~2×105 V·cm-1的低场下, 纯PVK薄膜中传导电流的主要是空穴载流子, 其迁移率在7.6×10-5 cm2·V-1·s-1, 而电子迁移的信息却很微弱, PAQ5掺杂浓度为2 wt%的PVK薄膜载流子传输性能没有大的变化.在PAQ5掺杂浓度为5 wt%的PVK薄膜中, 空穴的迁移率为6.0×10-5 cm2·V-1·s-1, 电子的迁移率为7.9×10-6 cm2·V-1·s-1.掺入的PAQ5建立的电子传输通道使掺杂薄膜载流子的传输性能得到显著提高.

The influence of doping of 1-phenyl-3,4-dimethyl-1H-pyrazolo-［3,4-b］-quinoline (PAQ5) on transport properties of charge carriers in Poly(N-vinylcarbazole) (PVK) polymer film was investigated in this paper. It can be seen from the macro relationships of current density J to electric field F that, when the electric field F is in the range of 106~ 107 V·cm-1, current density in pure PVK thin films is J∝F2.1, and in the doped PVK film with PAQ5 (4.8 wt%), J∝F2.9.The enhancement of the conductivity of the doped thin film in addition to the space charge limited current injected from the anode into PVK lay which was forming through holes transmission, there is also electronic current transported by doped particles PAQ5 which was injection from cathode. The transient photocurrent spectrums of the films measurement by Time of Flight method were analyzed. The results show that: under low electric field of 1×105~2×105 V·cm-1, the main transmission carriers in the naked PVK film are holes, and its mobility is about 7.6×10-5 cm2·V-1·s-1, while the information of electronic migration is too weak to be confirm. Carrier migration performance in the doped PVK film with 2 wt% PAQ5 is not distinct change from neked PVK film. And in the doped PVK film with 5 wt% PAQ5, the mobility of holes is about 6.0×10-5 cm2·V-1·s-1, and about 7.9×10-6 cm2·V-1·s-1 for electrons. The significant increase in electronic transport properties of doped PVK films is due to the transmission channels established by PAQ5.