Frontiers of Optoelectronics, 2018, 11 (3): 245–255, 网络出版: 2018-10-07  

Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity
作者单位
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials, Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
3 College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China
摘要
Abstract
Longitudinal twinning α-In2Se3 nanowires with the (1018) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2 V–1 S–1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 105 A W–1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 × 1012 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.1)

, , , . Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity[J]. Frontiers of Optoelectronics, 2018, 11(3): 245–255. Zidong ZHANG, Juehan YANG, Fuhong MEI, Guozhen SHEN. Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity[J]. Frontiers of Optoelectronics, 2018, 11(3): 245–255.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!