Photonics Research, 2018, 6 (11): 11001008, Published Online: Nov. 11, 2018  

Accurate extraction of fabricated geometry using optical measurement

Author Affiliations
1 Photonics Research Group, Ghent University-IMEC, Ghent, Belgium
2 Center of Nano and Biophotonics, Ghent, Belgium
3 Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106-9560, USA
Abstract
We experimentally demonstrate extraction of silicon waveguide geometry with subnanometer accuracy using optical measurements. Effective and group indices of silicon-on-insulator (SOI) waveguides are extracted from the optical measurements. An accurate model linking the geometry of an SOI waveguide to its effective and group indices is used to extract the linewidths and thicknesses within respective errors of 0.37 and 0.26 nm on a die fabricated by IMEC multiproject wafer services. A detailed analysis of the setting of the bounds for the effective and group indices is presented to get the right extraction with improved accuracy.

Yufei Xing, Jiaxing Dong, Sarvagya Dwivedi, Umar Khan, Wim Bogaerts. Accurate extraction of fabricated geometry using optical measurement[J]. Photonics Research, 2018, 6(11): 11001008.

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