基于碲镉汞液相外延材料表面固有的宏观缺陷，采用化学机械抛光（ CMP）方法对材料表面进行抛光平坦化，利用光学显微镜、白光干涉仪、激光共聚焦显微镜等分析方法对化学机械抛光前、后的材料表面进行分析表征。研究结果表明，化学机械抛光工艺能有效去除外延材料表面固有的竖纹、花纹、斜纹等宏观缺陷，同时可明显改善外延材料表面平整度及粗糙度， 0.5 mm×0.5 mm范围内薄膜表面平整度值降低到 20 nm以下，粗糙度值降低到 4 nm以下，提高了碲镉汞外延材料表面质量。化学机械抛光后的长波材料经标准器件工艺制备出的焦平面器件可达到较好长波器件水平。

The chemo-mechanical polishing(CMP) process was applied to the surface of long-wave HgCdTe(MCT) material grown by liquid phase epitaxy(LPE). The surface morphology of MCT films was characterized by a microscope, white-light interferometer(WLI), and 3D measuring laser microscope. The results showed that macro-defects in the MCT film surface could be removed by the CMP process. The surface roughness and flatness of MCT film were also reduced to 4 nm and 20 nm, which indicated an improvement in the quality of MCT films. Preliminary device results demonstrated that a fine LW IRFPA can be fabricated with LPE MCT film polished by the CMP process.