在大尺寸液晶显示器的薄膜晶体管(Thin Film Transistor，简称TFT)TFT工艺技术中，Cu正逐步取代Al作为电极材料。与Al电极制程相比，在进行栅极(Gate)制程时Cu容易发生腐蚀，这会降低产品良率。本文结合ADS(Advanced Super Demension Switch)显示模式下0+4掩膜板(mask)技术的Gate刻蚀制程和1+4掩膜版技术Gate光刻胶(Photo Resist，简称PR)剥离制程的Cu腐蚀现象进行分析，结合实验验证，确定Cu腐蚀原因，最终提出改善方案。实验结果表明：0+4mask技术的Gate制程中，ITO刻蚀液所含的HNO3会使MoNb/Cu结构电极的Cu发生电化学腐蚀；将电极结构更改为单Cu层则可以避免电化学腐蚀。在1+4mask技术的PR剥离(Strip)制程中，基板经历的剥离时间长或进行多次剥离或在剥离设备中停留，均会引起Cu腐蚀；增加剥离区间与水区间空气帘(Air Curtain)吹气量、增加TFT基板在过渡区间(H2O与剥离液接触的区间)的传输速度，管控剥离液使用时间等措施可以缓解Cu腐蚀。

In the large-size TFT process technology, Cu gradually replaces Al as the electrode material. However, compared with Al electrode, Cu is more prone to corrode in Gate process reducing product yield. In this paper, Cu corrosion in Gate etch process of 0+4 mask technology and Gate strip process of 1+4 mask technology is analyzed when it comes to ADS display mode. Combined with experimental verification, the reason of Cu corrosion is determined. Finally, improvement programs are proposed. Experiment results show: In Gate etch process of 0+4 mask technology, HNO3 contained in the ITO etchant will lead to galvanic corrosion of Cu in MoNb/Cu structured electrode. The galvanic corrosion can be avoided if the electrode structure is modified to a single Cu structure. In Gate strip process of 1+4 mask technology, Cu corrosion may be induced if the TFT substrate is stripped for a long time or repeatedly stripped or stayed in strip device for a long time. Increasing the blow rate of AC(Air Curtain) between strip zone and show zone, increasing the transfer speed of TFT substrate in transition zone(the section where H2O is in contact with stripper) , controlling the use time of stripper can relieve Cu corrosion.