利用粉体NbCl5作为Nb掺杂源, 采用常压CVD方法合成了大尺寸Nb 掺杂的少层MoS2薄膜。通过扫描电子显微镜和原子力显微镜观察获得了该薄膜样品的形貌和厚度信息。拉曼光谱和X射线光电子谱测试证实了Nb被掺入到了MoS2薄膜中, Nb掺杂的MoS2合金薄膜已经形成。最后, 对Nb 掺杂的少层MoS2薄膜的电学性质进行了测试。

Base on the ambient pressure CVD method, the large-scale Nb doped few-layered MoS2 films were synthesized by using NbCl5 powders as the Nb dopant source. The morphology and the thickness of these films were confirmed by scanning electron microscope and atomic force microscope. Raman spectroscopy and X-ray photoelectron spectrometer measurements confirm that Nb has been doped into the MoS2 film and the Nb doped MoS2 alloy has been formed. The conductivity of the Nb doped few-layered MoS2 has also been collected.