为了在单片上实现半导体激光二极管与探测器的集成, 开展了外延材料生长及结构工艺的设计研究。通过刻蚀工艺引入隔离区的方法制备了集成背光探测器的1.3 μm InGaAsP/InP半导体激光二极管芯片。管芯的光电性能测试显示, 激光二极管具有较低的阈值电流17.62 mA, 较高的斜率效率0.13 mW/mA, 输出功率可达11 mW; 在-0.7 V的反向偏压下, 探测器区域对光信号具有良好的线性响应, MPD的光电流超过0.3 mA, 在-1.7 V的反向偏压下, 暗电流可低至25 nA。

In order to realize the integration of semiconductor laser diodes and detectors on a single chip, the research on the epitaxial material growth and structural process was carried out. A 1.3 μm InGaAsP/InP semiconductor laser diode chip with integrated monitoring photo diode (MPD) was fabricated by introducing an isolation region using an etching process. The photoelectric performance test of the chip shows that the laser diode has a low threshold current (17.62 mA) and high slope efficiency (0.13 mW/mA); the output power can reach 11 mW. In addition, under a reverse bias of -0.7 V, the detector region has a good linear response to the optical signal and the photocurrent of the MPD exceeds 0.3 mA, and the dark current can be as low as 25 nA with a reverse bias of -1.7 V.