红外与毫米波学报, 2018, 37 (4): 399, 网络出版: 2019-01-10
真空退火的CdTe/Au掺杂HgCdTe界面状态的影响
Annealing of Au doped HgCdTe covered by electron beam evaporated CdTe
Au掺杂HgCdTe 电子束蒸发CdTe 退火 载流子浓度 Au分布 Au doped HgCdTe electron beam evaporation CdTe annealing carrier concentration distribution of Au
摘要
对使用CdTe覆盖的HgCdTe材料在不同温度下进行了一系列的退火实验.研究发现, 退火可以改善电子束蒸发CdTe的晶体状态, 使CdTe和HgCdTe之间的界面状态得到改善.Au掺杂HgCdTe覆盖CdTe后, 真空条件下退火, 240℃和300℃对Au掺杂的浓度分布改变不大, Au掺杂的浓度几乎不变.但是, 温度的不同会对汞空位的浓度产生显著的影响, 因此退火温度不同会使载流子浓度明显不同.退火温度从240℃升高至300℃后, 霍尔测试得到的载流子浓度从2×1016 cm-3左右升高至5.5×1016 cm-3左右.
Abstract
In this report, series of annealing experiments under different temperatures of Au-doped HgCdTe covered by CdTe have been implemented. The annealing process can improve the crystal state of electron beam evaporated CdTe layer. The interface between CdTe and HgCdTe can also be modified. The Au doping distribution in HgCdTe did not change after the vacuum annealing at 240℃ and 300℃. However, the Au element diffused into the CdTe cap layer significantly, leading to a higher concentration of (5~6)×1016 cm-3. On the other hand, the concentration of mercury vacancy after various annealing processes was different due to the temperature-dependent diffusion mechanism. In general, the carrier concentration measured by HALL effect varied from 2×1016 cm-3 to 5.5×1016 cm-3, when the annealing temperature was increased from 240℃ to 300℃.
王溪, 周松敏, 孙常鸿, 魏彦峰, 沈灏, 林春. 真空退火的CdTe/Au掺杂HgCdTe界面状态的影响[J]. 红外与毫米波学报, 2018, 37(4): 399. WANG Xi, ZHOU Song-Min, SUN Chang-Hong, WEI Yan-Feng, SHEN Hao, LIN Chun. Annealing of Au doped HgCdTe covered by electron beam evaporated CdTe[J]. Journal of Infrared and Millimeter Waves, 2018, 37(4): 399.
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