光电子技术, 2018, 38 (3): 162, 网络出版: 2019-01-10
GaN微盘模式分布与强度研究
The Study of Mode Distribution and Intensity in GaN Microdisks
摘要
使用时域有限差分方法系统地研究了直径从2 μm到50 μm的GaN基微盘在蓝光波段的模式强度和分布。设计了一种可以比拟微盘内高密度激子分布的偶极子排布方式, 使其能够激发盘内所有光学模式。研究了盘内最大激发强度和有效共振频率数量随微盘直径的变化关系, 揭示了盘内模式间的竞争关系, 并给出了微盘内三种典型的激发后的光场分布。
Abstract
The finite-difference time-domain method was used to systematically study the intensity and distribution of the GaN microdisks with diameters from 2 μm to 50 μm in the blue light region. A dipole arrangement that could match the distribution of high-density exciton within the microdisk was designed to enable it to excite all optical modes in the disk. The relationship of the maximum excitation intensity and the number of effective resonance frequencies in the disk with the diameter of the microdisk was studied, and the competitive relationship among the intradiscal patterns was revealed. Three typical excitation field distributions in the microdisk were presented.
方华杰, 高鹏, 蒋府龙, 刘梦涵, 徐儒, 周婧, 张熬, 陈鹏, 刘斌, 修向前, 谢自立, 韩平, 施毅, 张荣, 郑有炓. GaN微盘模式分布与强度研究[J]. 光电子技术, 2018, 38(3): 162. 方华杰, 高鹏, 蒋府龙, 刘梦涵, 徐儒, 周婧, 张熬, 陈鹏, 刘斌, 修向前, 谢自立, 韩平, 施毅, 张荣, 郑有炓. The Study of Mode Distribution and Intensity in GaN Microdisks[J]. Optoelectronic Technology, 2018, 38(3): 162.