对张应变GaInP量子阱激光器材料结构开展变温光致发光特性的研究, 实验中激光器有源区为9 nm Ga0.575In0.425P量子阱结构, 采用N离子注入并结合730℃下的快速热退火处理来诱导有源区发生量子阱混杂.变温(10 K~300 K)光致发光特性研究表明：300 K时, 只进行快速热退火或者N离子注入的样品不发生峰值波长蓝移, N离子注入后样品在退火时发生波长蓝移, 且蓝移量随退火时间的增加而增加; 低温条件时, 不同样品的光致发光特性差别较大, 光致发光谱既有单峰, 也有双峰, 分析认为双峰中的短波长发光峰为本征激子的复合, 长波长发光峰是由于有序区域中的电子与无序区域中的空穴复合引起.本研究可为半导体激光器长期工作可靠性和材料低温特性的相互关系提供一种新的研究思路.

The temperature-dependent photoluminescence characteristics of the strained GaInP quantum well laser structure were studied in the paper. 9 nm Ga0.575In0.425P quantum wells were selected for the active region of the laser. N ion implanting and rapid thermal annealing at 730°C were used to induce quantum well intermixing in the active region. The photoluminescence characteristics at 10 K~300 K shows that the blue-shift of photoluminescence spectra at 300 K did not occur in the samples only subjected to rapid thermal annealing or N ions implantation. While for the sampels with the N ions implantation and annealing, blue-shift was found to be increased with the annealing time. Addtionally, the photoluminescence spectra of different samples differed greatly at low temperature conditions, both single and double peaks were observed in the photoluminescence spectra. The short wavelength peak in the double photoluminescence peaks was deduced to be caused by the recombination of intrinsic excitons, and the long wavelength peaks were deduced to be caused by the recombination between the electrons in order region and the holes in disordered region. This study can provide a new research idea for the relationship between long-term reliability and low temperature characteristics of semiconductor lasers.