采用平面光栅搭建外腔压窄单巴条半导体激光器线宽,得到中心波长为 766.5 nm、线宽为0.12 nm的抽运光。抽运光经光束整形后聚焦到长度为8 mm的钾蒸气室中心,蒸气室内充有600 Torr (1 Torr=133.322 Pa)氦气作为缓冲气体。保持钾蒸气室温度为190 ℃,获得了中心波长为769.9 nm 、功率为138 mW的线偏振钾激光输出。

An external cavity is built with a plane grating to narrow the linewidth of the diode bar laser, and the pumped laser with center wavelength of 766.5 nm and linewidth of 0.12 nm is obtained. After the beam shaping, the laser is focused on a potassium vapor cell center, which is 8 mm long and is filled with 600 Torr (1 Torr=133.322 Pa) helium as buffer gas. Keeping the potassium vapor cell's temperature at 190 ℃, we obtain output power of 138 mW with 769.9 nm center wavelength of potassium laser.