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砷化镓基近红外大功率半导体激光器的发展及应用

Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

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摘要

综述了世界各国近年来在大功率半导体激光器方面所取得的研究成果,重点介绍了砷化镓基近红外大功率半导体激光器在输出功率、亮度、电光转换效率、光束质量、寿命与可靠性方面的研究进展。结合目前市场分析,详细阐述了半导体激光器的应用前景,展望了未来大功率半导体激光器的发展趋势。

Abstract

The recent research achievements on high-power semiconductor lasers in various countries of the world are reviewed. The research progress is mainly introduced in terms of output power, brightness, electro-optical conversion efficiency, beam quality, lifetime, and reliability of GaAs-based near-infrared high-power semiconductor lasers. Combined with the current market analysis, the application prospect of these semiconductor lasers is elaborated. The development trend of high-power semiconductor lasers in the future is forecasted.

Newport宣传-MKS新实验室计划
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中图分类号:TN24

DOI:10.3788/lop56.040003

所属栏目:综述

基金项目:大功率半导体激光器技术(41414010302)

收稿日期:2018-07-30

修改稿日期:2018-08-26

网络出版日期:2018-09-10

作者单位    点击查看

袁庆贺:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083中国科学院大学材料科学与光电技术学院, 北京 100049
井红旗:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
张秋月:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
仲莉:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
刘素平:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
马骁宇:中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083

联系人作者:马骁宇(maxy@semi.ac.cn)

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引用该论文

Yuan Qinghe,Jing Hongqi,Zhang Qiuyue,Zhong Li,Liu Suping,Ma Xiaoyu. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003

袁庆贺,井红旗,张秋月,仲莉,刘素平,马骁宇. 砷化镓基近红外大功率半导体激光器的发展及应用[J]. 激光与光电子学进展, 2019, 56(4): 040003

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