Chinese Optics Letters, 2019, 17 (2): 020010, Published Online: Feb. 14, 2019
Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices
Abstract
The electronic and optical properties of the ZrS2/SnS2 van der Waals heterostructure have been investigated. We find out that the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in the heterostructure can be enhanced to the amount of 106 in the ultraviolet light region. In addition, the tuning electronic properties of ZrS2/SnS2 heterostructure are very interesting, due to the transitions from type-I to type-II band alignment that can occur by applying an external electric field. These results suggest that the atomically thin materials ZrS2/SnS2 heterostructure will be utilized for flexible optoelectronic applications.
Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei. Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices[J]. Chinese Optics Letters, 2019, 17(2): 020010.