通过溶液法制备了新型有源层钨锌锡氧化物(WZTO)薄膜晶体管(TFT), 研究了不同退火温度对WZTO薄膜和TFT器件性能的影响。XRD结果表明即使退火温度达到500 ℃, WZTO薄膜仍为非晶态结构。W掺杂显著降低了薄膜表面粗糙度, 其粗糙度均从0.9 nm降低到0.5 nm以下; 但不影响薄膜可见光透过率, 其透过率均大于85%。同时XPS分析证实随退火温度升高, WZTO薄膜中对应氧空位的峰增加。制备的WZTO器件阈值电压由8.04 V 降至3.48 V, 载流子迁移率随着退火温度的升高而增大, 开关电流比达到107。

Novel tungsten-zinc-tin-oxide(WZTO) thin film transistors(TFTs) are fabricated by solution process and the influence of annealing temperatures on WZTO films and TFTs is thorough investigated. XRD results show that the WZTO films are amorphous when annealing temperature reaches 500 ℃. The W doping significantly reduced the surface roughness of the ZTO films and its roughness of root-mean-square decreased from 0.9 nm to less than 0.5 nm. The transmittance of WZTO is more than 85%. In addition, XPS analysis confirmed that annealing treatment remarkably improved the oxygen vacancy of WZTO film which resulted in the increase of carrier concentration in films. The threshold voltage of devices reduces from 8.04 V to 3.48 V. The mobility of devices changes with the increase of annealing temperatures and the ratio of ON-state current and OFF-state current is about 107.