Photonics Research, 2019, 7 (2): 02000193, Published Online: Feb. 19, 2019
Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
Abstract
We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm 1 , peak width (full width at half-maximum) of 68.9 cm 1 , and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
Swe Z. Oo, Antulio Tarazona, Ali Z. Khokhar, Rafidah Petra, Yohann Franz, Goran Z. Mashanovich, Graham T. Reed, Anna C. Peacock, Harold M. H. Chong. Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices[J]. Photonics Research, 2019, 7(2): 02000193.