与传统的法布里-珀罗(F-P)腔半导体激光器相比,采用分布布拉格反射器(DBR)光栅的边发射半导体激光器在窄线宽、输出波长稳定等方面展示出了优异的特性,其在激光通信、光互联及非线性频率转换等领域有着巨大的应用需求。通过合理设计DBR光栅及器件结构,DBR半导体激光器可以实现激光窄线宽、双波长输出以及波长可调谐等性能。基于内置DBR光栅结构,DBR锥形半导体激光器可以同时兼具高功率、窄线宽及高光束质量等特性。针对这几类激光器,阐述了其结构设计、制作工艺及其性能优势,总结了国内外最新研究进展与发展现状,并对DBR半导体激光器的研究工作和发展趋势做出了进一步的讨论和展望。

Compared with traditional Fabry-Perot (F-P) cavity semiconductor lasers, the edge-emitting semiconductor lasers with distributed Bragg reflector (DBR) gratings exhibit excellent characteristics in terms of narrow linewidth and stable output wavelength. They have huge application requirements in the fields of laser communication, optical interconnection and nonlinear frequency conversion. The DBR semiconductor laser can achieve laser narrow linewidth, dual wavelength output and wavelength tunability by properly designing the DBR grating and device structure. The DBR tapered semiconductor laser can simultaneously combine high power, narrow linewidth and high beam quality owing to the built-in DBR grating structure. In this paper, the structural design, fabrication process and performance advantages of these types of lasers are discussed, and the present situation of research and development at home and abroad are summarized. Based on this, the research work and development trend of DBR semiconductor lasers are further discussed and prospected.