设计了一种在室温工作的太赫兹热探测器.探测器由片上天线和温度传感器耦合而成.天线由NMOS温度传感器的栅极组成, 吸收入射的太赫兹波将其转化为焦耳热, 生成的热量引起的温度变化由温度传感器探测.整个探测器的探测过程分为电磁辐射吸收、波-热转换、热-电转换三个过程, 并分别进行了建模分析, 仿真得到天线吸收率为0.897, 热转换效率为165 K/W, 热电转换效率为1.77 mV/K.探测器基于CMOS 0.18 μm工艺设计, 工艺处理后将硅衬底打薄至300 μm.探测器在3 THz太赫兹环境下, 入射功率为1 mW时, 电压响应率仿真值为262 mV/W, 测试值为148.83 mV/W.

A structure of thermal terahertz detector working at room temperature was proposed. The detector is consisted of an on-chip antenna and a temperature sensor. The antenna made of gates of the temperature sensor absorbs incident terahertz wave and converts it to Joule heat. The heat-generated temperature rise is then detected by the temperature sensor. The working flow of the detection can be divided into three parts: electromagnetic absorption, thermal-heat conversion and thermal-electrical conversion. Modeling and simulation of every process are presented. The simulated Antenna absorptivity is 0.897, the heat transfer efficiency is 165 K/W and the thermoelectric conversion efficiency is 1.77 mV/W. The detector is designed based on 0.18 μm CMOS technology with post-process thinning the silicon substrate to 300 μm. Its simulated voltage responsivity is 262 mV/W at 3 THz frequency, while the tested value is 148.83 mV/W under the incident power of 1mW.