采用高温固相法合成K2MgSiO4∶Eu3+, Tb3+系列荧光材料.通过X射线衍射谱、光致发光谱以及荧光寿命对材料的物相结构和发光性质进行了表征和研究.结果表明：系列样品的X射线衍射图谱衍射峰与标准卡片吻合得很好, 实验浓度范围内Eu3+、Tb3+单掺或共掺没有改变K2MgSiO4的晶体结构.由材料的光致发光谱可以看出：Eu3+单掺K2MgSiO4样品在394 nm (7F0→5L6)激发下, 显示主峰为613 nm(5D0→7F2)处的红光发射; Tb 3+单掺K2MgSiO4样品在378 nm(7F6→5G6)激发下, 显示主峰为542 nm(5D4→7F5)处的绿光发射.当Eu3+和Tb3+共掺于K2MgSiO4基质中时, 样品呈现出Eu3+较强的特征发射, Tb3+发射峰则较弱, 并且随着掺入Tb3+离子浓度的增加, Eu3+的发射明显增强, Tb3+的发射没有明显变化.另外, 当固定Eu3+浓度, 逐渐增加Tb3+离子掺杂浓度时, Eu3+的荧光寿命逐渐增加; 固定Tb3+浓度, 逐渐增加Eu3+离子掺杂浓度时, Tb3+的荧光寿命逐渐减小.这些现象确定了K2MgSiO4∶Eu3+, Tb3+荧光材料中存在Tb3+→Eu3+的能量传递关系, 使得K2MgSiO4基质中Eu3+红光发射得到改善和提高.

A series of fluorescent materials K2MgSiO4∶Eu3+, Tb3+ were synthesized by the high temperature solid phase method. The phase structure and luminescent properties of the materials were characterized and studied by X-ray diffraction, photoluminescence and fluorescence lifetime. The results show that the X-ray diffraction pattern diffraction peaks of the series samples agree well with the standard card, Eu3+, Tb3+ single doping or co-doping could not change the crystal structure of K2MgSiO4 in the experimental concentration range. It can be seen from the photoluminescence spectrum of the material that the photoluminescence spectrum of Eu3+ doped K2MgSiO4 reveal a red light emission at 613 nm (5D0→7F2) with an excitation at 394 nm (7F0→5L6); With Tb3+ ion singly doped K2MgSiO4 shows a green light emission at 542 nm (5D4→7F5) with an excitation at 378 nm (7F6→5G6). When Eu3+ and Tb3+ are co-doped in the K2MgSiO4, the sample exhibits a strong characteristic emission of Eu3+, the Tb3+ emission peak is weaker, and with the increase of the concentration of Tb3+ ions, the emission of Eu3+ is obviously enhanced, while there is no significant change in the emission of Tb3+. In addition, when the Eu3+ concentration is fixed and the Tb3+ ion doping concentration is gradually increased, the fluorescence lifetime of Eu3+ increased gradually; when the concentration of Tb3+ is fixed and the Eu3+ ion doping concentration is gradually increased, the fluorescence lifetime of Tb3+ decreased gradually. These phenomena determine the energy transfer relationship of Tb3+→Eu3+ in K2MgSiO4∶Eu3+, Tb3+ fluorescent materials. This relationship improves and enhances Eu3+ red light emission in the K2MgSiO4 matrix.