光电子快报(英文版), 2019, 15 (2): 113, Published Online: Apr. 16, 2019
Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design
Abstract
Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-xAs compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm-3, N++ layer electron concentration up to 5×1019 cm-3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing ex-cessive voltage droop.
LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. 光电子快报(英文版), 2019, 15(2): 113.