光电子快报(英文版), 2019, 15 (2): 113, Published Online: Apr. 16, 2019  

Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design

Author Affiliations
1 College of Physics Science and Technology & Institute of Optoelectronic Technology, Yangzhou University, Yang-zhou 225002, China
2 Yangzhou Change Light Optoelectronic Co., Ltd., Yangzhou 225009, China
Abstract
Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes (LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition (MOCVD) with different doping concentrations and Al contents in AlxGa1-xAs compound. And their optoelectric properties show that the optimal design for tunneling region corresponds to P++ layer with hole concentration up to 1×1020 cm-3, N++ layer electron concentration up to 5×1019 cm-3 and constituent Al0.2Ga0.8As in the tunneling junction region. The optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction (12 mW). Furthermore, the optimized device keeps the same spectral characteristics without introducing ex-cessive voltage droop.

LIN Hong-liang, ZENG Xiang-hua, SHI Shi-man, TIAN Hai-jun, YANG Mo, CHU Kai-ming, YANG Kai, LI Quan-su. Optimization of GaAs-based 940 nm infrared light emit-ting diode with dual-junction design[J]. 光电子快报(英文版), 2019, 15(2): 113.

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