基于SiC衬底的0.25 μm GaN HEMT工艺, 设计了一款X~Ku波段宽带1 W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性, 并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构, 降低匹配网络的Q值, 通过带通匹配网络拓扑, 实现了宽带匹配。测试结果表明, 在28 V的工作电压下, 8~18 GHz的频率内驱动放大器实现了输出功率大于30 dBm, 功率附加效率大于21%, 功率增益大于15 dB。芯片尺寸为: 2.20 mm×1.45 mm。该芯片电路具有频带宽、效率高、尺寸小的特点, 主要用于毫米波收发组件、无线通讯等领域, 具有广泛的应用前景。

In this paper, an X~Ku band broadband 1 W driver amplifier MMIC based on 0.25 μm GaN HEMT on SiC process is designed. The design uses an equivalent RC model of active devices’ large-signal output impedance for verifying the accuracy of the GaN HEMT process model. And large-signal output impedances of GaN HEMT with different dimensions are achieved. Negative feedback structure is applied for the first-stage transistor to reduce the Q value of the matching network. The broadband matching is successfully achieved through band-pass matching network topology. The measurement results show that this driver amplifier at 28 V operation voltage achieved over 30 dBm output power, 21% power added efficiency and 15 dB power gain from 8 GHz to 18 GHz. The chip size is 2.20 mm×1.45 mm. The MMIC chip has the characteristics of wide bandwidth, high efficiency and small size. It can be mainly used in fields such as millimeter-wave transceiver components and wireless communication, and has broad application prospect.