光子学报, 2019, 48 (4): 0423001, 网络出版: 2019-04-28   

硅基二氧化硅波导阵列相位控制芯片

Chip of Phase Control Arrays Based on Silica on Silicon
作者单位
1 中国科学院半导体研究所 集成光电子学国家重点联合实验室, 北京 100083
2 中国科学院大学 材料科学与光电技术学院, 北京 100083
摘要
设计并制作了硅基二氧化硅波导阵列相控芯片, 该芯片由分束单元、相位调制单元、输出波导阵列三部分构成, 分束单元采用三级1×2的光分束器级联而成, 相位调制单元采用热光调制方式, 输出部分包含8根密集阵列波导.8根波导输出的光在远场发生干涉, 形成扫描光束, 加电后通过二氧化硅热光效应, 折射率变化0.027%(0.000 4)时, 扫描光束偏转5.5°.该波导相控阵列采用2.0%超高折射率差的硅基二氧化硅波导为材料, 经等离子体增强化学气相沉积法进行材料生长及退火, 再经电感耦合等离子体干法刻蚀技术进行刻蚀, 最后切割抛光制作而成.测试结果表明, 静态下该芯片8条输出阵列波导形成清晰干涉光斑, 在电压达到130 V时, 热调制相位后, 光斑移动5.5°.
Abstract
A silicon-based silica optical waveguide phased array chip was designed and fabricated. The chip consisted of three parts, including a beam splitting unit, a phase modulation unit and an output waveguide array. The splitting unit was cascaded by three 1×2 optical beam splitters. The phase modulation unit adopted the method of thermo-optic modulation, and the output part comprised 8 dense array waveguides. Light output from 8 waveguides formed interference in the far field, becoming scanning beam. Passing through the thermal photo-effect of the silica after power-on,when the refractive index changed by 0.027%(0.000 4), the scanning beam changed by 5.5°. The waveguide phased array adopted 2.0% ultra-high refractive index difference silicon-based silica waveguide as material, which was fabricated by material growth and annealing by plasma enhanced chemical vapor deposition and then etched by inductive coupled plasma dry etching technology, and finally cut and polished. The test results show that the static output of the eight output array waveguides forms a clear interference spot. When voltage is up to 130 V, the scanning beam angle changes by 5.5 °.

颜跃武, 安俊明, 张家顺, 王亮亮, 李建光, 王红杰, 吴远大, 尹小杰, 王玥. 硅基二氧化硅波导阵列相位控制芯片[J]. 光子学报, 2019, 48(4): 0423001. YAN Yue-wu, AN Jun-ming, ZHANG Jia-shun, WANG Liang-liang, LI Jian-guang, WANG Hong-jie, WU Yuan-da, YIN Xiao-jie, WANG Yue. Chip of Phase Control Arrays Based on Silica on Silicon[J]. ACTA PHOTONICA SINICA, 2019, 48(4): 0423001.

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