设计了一款320×256元抗辐射日盲紫外焦平面阵列探测器, 重点针对探测器的读出电路版图、积分开关偏置点、探测器芯片外延结构及器件工艺开展了抗辐射加固设计。对加固样品开展了γ总剂量和中子辐照试验和测试, 试验结果表明样品的抗电离辐照总剂量达到150krad(Si), 抗中子辐照注量达到1×1013n/cm2(等效1MeV中子), 验证了抗辐射加固措施的有效性。

A type of 320×256 radiationhardened solarblind ultraviolet focal plane arrays was designed, and the work was mainly focused on the design of read out integrated circuit (ROIC), offset points of the integral switch, eptiaxy structure and process of the chips. Gamma and neutron irradiation tests were performed on the samples, and the results show that the designed FPA samples can realize radiation hardening with a total ionizing dose of 150krad (Si) and neutron exposure of 1×1013n/cm2, thus the effectiveness of radiation hardened design is verified.