利用异靛蓝、丙烯二氧噻吩、噻吩单元组成的供体-受体类型半导体聚合物IPDT构建了有机电子器件Al/IPDT/ITO,该器件具有明显的忆阻特性,开/关电压为8 V/-7.5 V,高低电阻比达到了10 2以上。研究了不同波长激光的照射对器件忆阻性能的影响,结果表明:波长为632 nm、功率为3 mW的激光对忆阻性能的影响显著;照射60 s后,器件电流的走向发生了反转,开/关电压降低到-2.2 V/1.3 V,高低电阻比提高到10 4,电流降低了一个量级,且电流-电压曲线的涨落减小,有效降低了器件的功耗;稳定性循环测试次数由未经激光照射时的2000提高到3500,提高了数据读取的准确性和稳定性。

Donor-acceptor-type semiconductor polymer IPDT composed of isoindigo, propylene dioxythiophene and thiophene unit was used to constructe an organic electronic device with a configuration of Al/IPDT/ITO. It was found that the device had obvious memory resistance characteristics with ON/OFF voltages of 8 V/-7.5 V and a high-low resistance ratio over 10 ². The effect of laser irradiation under different wavelengths on the memory resistance performances of the device was studied. The results show that a laser with 632-nm wavelength and 3-mW power strongly affects the memory resistance performances. After irradiation for 60 s, the current trend of the device is reversed. The ON/OFF voltagess are reduced to -2.2 V/1.3 V and the high-low resistance ratio is increased to 10 ⁴. The current is decreased by an order of magnitude, the fluctuation of the current-voltage curve is decreased, and the power consumption of the device is effectively reduced. The number of stability cycle tests is increased from 2000 before laser irradiation to 3500, which improves the accuracy and stability of data reading.